Samsung will launch 4TB 850-series SSDs in 2016

Samsung has announced that it will introduce new solid state drives with larger capacities in early 2016. The company will use its recently announced nand chips to expand the 850 Evo SSDs to 4TB, among other things.

In August at the Flash Memory Summit, Samsung announced its third-generation 3d V-nand technology. With those chips, which consist of 48 layers of memory, chips of 256Gb can be built. The current, second-generation 3d V-nand has capacities of 128Gb with 32 layers. The higher capacity per nand chip of the new generation enables greater storage capacities for SSDs. Samsung announced at its SSD Global Summit that it will release its third-generation V-nand SSDs in early 2016.

The 2.5″ form factors of the 850 Pro and 850 Evo SSDs will then be available in capacities up to 4TB. The maximum capacity is now 2TB. The more compact m2 version of the 850 Evo will also have a capacity doubling of 512GB to 1TB. Other drives such as the PM863 and SM863 will also be equipped with the third generation V-nand. At the same time, Samsung will simplify the naming: where 3d V-nand is still spoken today, the Korean company wants to go V-nand That should communicate a clearer distinction between regular and 3d-nand.