Samsung starts production of 128GB DDR4 modules with through silicon vias

Samsung has started mass production of tsv-ddr4 memory in 128GB modules. This concerns rdimms for servers, but Samsung promises to extend the through silicon via technology to consumer products as well.

The registered dual inline memory modules, or rdimms, are made up of 144 ddr4 chips, which are arranged in 36 dram packages of 4GB. Those packages in turn contain four 8Gb chips that are produced at 20nm. Samsung has applied the through silicon via technology when stacking the chips.

With TSV technology, the interconnects run like tunnels through the various silicon slices of the stacked chips, which results in speed gains. The throughput of the 128GB ddr4-rdimms is 2400Mbit/s, almost double the 64GB rdimms of the previous generation, where no TSVs are used. Consumption would also have fallen by 50 percent compared to that generation.

Samsung also promises to release load-reduced dimm variants of the 128GB modules in the coming weeks. In addition, the manufacturer says it will bring the TSV technology to many more products, including high bandwidth memory, as is now used by AMD for Radeon GPUs, and other consumer products. In addition, the company plans to increase the throughput speed to 2667Mbit/s and 3200Mbit/s.