Samsung starts mass production of second-generation 10nm-class DDR4

Samsung has announced that it has begun mass production of the second generation of eight gigabit DDR4 dram chips on a 10nm class process. The company says that this will achieve better performance and will increase the production of dram.

According to Samsung, the new memory chip supports a maximum data rate of 3600 megabits per second; the first generation of 8Gbit ddr4-dram chips did not go beyond 3200 Mbit/s. Samsung speaks of a 10 to 15 percent increase in performance and energy efficiency compared to the first generation chips. Samsung also claims that with this new mass production it can get thirty percent more chips from a wafer.

The company claims to have achieved the improvements by using new technologies, without the application of euv. According to Samsung, this is a highly sensitive data sensing system that can be used to determine more accurately which data should be stored in each cell. In addition, the South Korean concern uses an air spacer in the design, which would significantly reduce the parasitic capacity. This would allow improved scaling and faster-acting cells.

With these innovations, Samsung says it will be able to accelerate plans for the faster introduction of next generations of memory chips. This concerns ddr5, hbm3, lpddr5 and gddr6. The company expects to rapidly increase production of the second-generation ddr4 chips and also ramp up production of the previous-generation memory chips to meet the growing demand for dram.