Samsung begins mass production of 128GB and 512GB ufs 3.0 flash storage

Samsung begins mass production of embedded ufs 3.0 memory chips with capacities of 128GB and 512GB. The chips reach up to 2100MB/s and will be released this month. 256GB and 1TB versions will be available in the second half of this year.

The 512GB ufs 3.0 memory module consists of eight stacked 512Gbit dies of fifth-generation V-Nand memory and an integrated memory controller. Samsung is releasing ufs 3.0 memory modules this month with capacities of 128GB and 512GB. The Galaxy S10, S10+ and S10e with that memory size may have these chips on board. On the specification page of the smartphones, Samsung does not state which ufs storage is used exactly.

According to Samsung, the ufs 3.0 storage memory is up to twice as fast as ufs 2.1 flash storage. The 512GB chip achieves a maximum sequential read speed of 2100MB/s and a write speed of 460MB/s. In January, Samsung presented a ufs 2.1 module with a capacity of 1TB. It has a read speed of 1000MB/s and write speed of 260MB/s. Presumably, that module is in the 1TB version of the Galaxy S10+.

From the second half of this year, Samsung will also produce ufs 3.0 modules of 256GB and 1TB. For example, they could find their way to the Galaxy Note 10. Samsung also supplies its UFS memory modules to other manufacturers.