Samsung announces some specs of its gddr6 vram

Samsung has announced that the company is working on the development of gddr6-ram. According to the manufacturer, this graphical memory can handle a throughput of 16Gbit/s at a lower voltage than gddr5.

The gddr6 ram is named in a pre-announcement of some of the award-winning products that will be on display at CES 2018. The full announcement with all specifications will probably have to wait until the fair starts on January 7, 2018.

What Samsung does mention in the pre-announcement is that the memory can process images at 16Gbit/s at a voltage of 1.35V, compared to the 8Gbit/s and 1.5V of gddr5. Incidentally, the fastest gddr5x memory currently available can handle a maximum speed of 14 Gbit/s. Anandtech speculates that Samsung uses 8Gb chips, which are baked on an 18nm process.

Last year, Samsung already announced that the manufacturer wants to start producing gddr6 memory from 2018, which the company seems to be on schedule, given the announcement during CES 2018. Micron has announced that the company plans to bring gddr6 memory to the market this year and SK Hynix has also already shown a gddr6 chip.