Rumor: Samsung develops double stack technique for nand with 160 layers

According to Korean media, Samsung is working on its seventh-generation nand memory, which would consist of 160 layers or more. Samsung would develop a so-called double stack technique for this.

With the double stack technique, Samsung would apply the cylindrical holes for its charge trap technology ‘in two times’, instead of in one go, ETNews writes, but the site does not report further details. Based on previous announcements from Samsung, it seems likely that the company will stick two dies of its 3d-nand together and connect it via silicon via channels. In any case, according to ETNews, the seventh-generation nand memory could consist of 160 layers or more. It is not known when the first SSDs with the new type of nand should appear.

Samsung announced its sixth-generation nand last year. Even then, the company said that with its production techniques, up to 300 layers would eventually be within reach, namely by stacking three nand-stacks.

For sixth-generation V-Nand memory chips, as Samsung calls its 3d-nand, the company uses an undisclosed number of “more than 100 layers.” Meanwhile, competitors such as Micron and SK Hynix have switched to 128-layer nand.