Micron announces 256GB smartphone storage based on 64-layer 3D Nandd

Micron announced the second-generation 64-layer 3D Nand for mobile devices at Mobile World Congress in Barcelona. There is support for the ufs 2.1 standard and there are variants with a capacity of 256, 128 and 64GB.

It concerns 64-layer 3D TLC Nand memory that, according to the manufacturer, enables smartphone makers to equip the next generation of mobile phones with advanced functionalities such as artificial intelligence and virtual reality. According to Micron, there is an increasing need for faster and more efficient access to stored data.

The manufacturer reports that the new NAND memory is fifty percent faster than the 3D-TLC Nand memory from the previous generation. Compared to this first-generation NAND memory, Micron says the storage density of the new memory has doubled while it does not take up more space.

The architecture of Micron’s nand memory is said to be optimized for mobile use, in the sense that it has low latency and more cells packed into the same area. Power consumption would also have been minimized by a specially designed system.