Micron to produce 232-layer 3D Nand memory by the end of this year

Micron Announces 232 Layer 3D Nand Memory. The memory manufacturer wants to start producing the memory on a large scale this year and then use it for solid state drives, among other things.

By the end of this year, Micron will produce nand memory with two stacks of 232 layers each based on its CuA design. CuA stands for ‘CMOS under Array’, which means that the cmos circuitry is placed under the active memory layers.

Micron has been producing since last year 3d nand memory with 176 layers and released the first SSDs for data centers with this memory off. The step to 232 layers means that the size of the die for 1Tbit tlc-nand decreases and Micron can therefore extract more memory from wafers. Resulting in a decrease in production costs.

Micron made the arrival of 3d-nand with 232 layers announced during a presentation to investors, but the company did not disclose further details about the memory. For example, it is unknown what the I/O speeds are. The company did show a roadmap with plans for nand with more than 300 and 400 layers, but it is unknown when the company wants to start production of this memory.