SK Hynix develops 16Gbit DDR4 memory on a ‘1Znm process’

SK Hynix is ​​developing 16Gbit DDR4 memory on a 1Znm process. Memory modules with this memory can function about 40 percent more economically than modules with 8Gbit memory based on the 1Ynm process.

The throughput of the 1Znm-produced ddr4 memory is up to 3200MT/s, just like the 1Ynm-produced ddr4, which SK Hynix announced almost a year ago. However, the consumption of modules with the new 16Gbit memory can be about 40 percent lower than that of modules with the existing 8Gbit memory. SK Hynix shows modules with 32GB.

SK Hynix plans to start mass production next year. Lpddr5 and hbm3 must then also be made using the renewed process. The 1Znm process is SK Hynix’s third ’10nm class’ process. Previously, the company made 8Gbit chips on 1Xnm and 1Ynm nodes. The point is to designate production processes between 10 and 19nm, with the Z generation covering sizes from 10nm to 13nm.

The manufacturer still makes the chips by using immersion lithography and not by using euv machines. As a result, according to the manufacturer, costs remain limited, while production compared to the previous generation would have increased by 27 percent.