Samsung announces 16GB hbm2e memory module with increased data rate

Samsung has announced a new generation of high bandwidth memory for graphics applications, data centers and supercomputers. The hbm2e codenamed Flashbolt offers 16Gbit per die, twice as much as the previous generation.

Samsung announced its Flashbolt-hbm2e during Nvidia’s Technology Conference. With 3.2Gbit/s, the memory offers 33 percent faster throughput per pin than its Aquabolt predecessor. In addition, the capacity per die has been doubled from 8Gbit to 16Gbit, so that Samsung can now make memory modules of 16GB instead of 8GB.

Furthermore, the total throughput of Flashbolt is 410GB/s, while with Aquabolt it is 307.2GB/s. Samsung will not disclose further details about hbm2e. For example, it is unclear on which production process the company makes Flashbolt, at what voltage it works and when mass production will start.